MIL-STD-883 Electrical Testing

TM1010 is performed to determine the resistance of a semiconductor device to alternating high and low temperatures extremes.

TM1014 testing is conducted to determine the quality of the hermetic seal for semiconductor devices with designed internal cavities. Fine and Gross leak conditions are both measured.

TM1015 is a test used to eliminate marginal devices or devices with manufacturing defects that are evidenced as time and stress dependent failures. These defective devices would typically exhibit early lifetime failure under normal operating conditions.

A Constant Acceleration test is where centrifugal forces are used on a semiconductor device to determine if it exhibits types of structural and mechanical weaknesses not necessarily detected by other mechanical tests.

TM2004 test provides various tests for determining the integrity of microelectronic device leads (terminals), welds, and seals.

TM2009 is used to verify the workmanship of packaged devices. This test method shall also be utilized to inspect for damage due to handling, assembly, and/or test of the packaged device.

TM2010 is performed to check the internal materials, construction, and workmanship of microcircuits for compliance with the requirements of the applicable acquisition document.

TM2012 is conducted nondestructively detect defects within the sealed case, especially those resulting from the sealing process, and internal defects such as foreign objects, improper interconnecting wires, and voids in the die attach material or in the glass when glass seals are used.

TM2013 is an internal visual inspection for use in destructive physical analysis (DPA) procedures.

TM2014 examination is to verify that internal materials, design and construction are in accordance with the applicable acquisition document.

TM2016 is a test used to verify that the external physical dimensions of the device are in accordance with the applicable acquisition document.

TM2017 test is to visually inspect the internal materials, construction, and workmanship of hybrid, multichip and multichip module microcircuits.

TM2011 test is to measure bond strengths, evaluate bond strength distributions, or determine compliance with specified bond strength requirements of the applicable acquisition document.

TM2022 test method is to determine the solderability of all ribbon leads up to 0.050 inch (1.27 mm) in width and up to 0.025 inch (0.64 mm) in thickness which are normally joined by a soldering operation and used on microelectronic devices.

TM2015 test is verify that the markings will not become illegible on the component parts when subjected to solvents.

TM2018 method provides a means of judging the quality and acceptability of device interconnect metallization on non-planar oxide integrated circuit wafers or dice.

TM2030 examination is to nondestructively detect unbonded regions, delaminations and/or voids in the die attach material and at interfaces within devices through the measurement of acoustic continuity