MIL-STD-750 Electrical Testing

TM1051 is performed to determine the resistance of a semiconductor device to alternating high and low temperatures extremes.

TM1701 testing is conducted to determine the quality of the hermetic seal for semiconductor devices with designed internal cavities. Fine and Gross leak conditions are both measured.

Burn-In (TM1038 for diodes, rectifiers, and zeners, TM1039 for transistors, and TM1040 for thyristors (controlled rectifiers)) is a test used to eliminate marginal devices or devices with manufacturing defects that are evidenced as time and stress dependent failures. These defective devices would typically exhibit early lifetime failure under normal operating conditions.

A TM2006 test is where centrifugal forces (typically 20,000g) are used on a semiconductor device to determine if it exhibits types of structural and mechanical weaknesses not necessarily detected by other mechanical tests.

The TM2005 test is used to determine if axial lead glass body diodes are free of intermittent connections or opens under conditions of tensile stress and controlled temperature.

TM2068 is performed to visually inspect nontransparent glass-encased, double plug, non-cavity, axial leaded or surface mount semiconductor devices for defects which may affect the integrity of the hermetic seal.

TM2069 test method is to verify the construction and quality of workmanship of semiconductor devices in the assembly process to the point of pre-cap inspection.

TM2070 is conducted to verify the construction and quality of workmanship in wafer, wafer dc testing, die inspection, and assembly processes to the point of semiconductor device pre-cap inspection.

TM2071 test method is to verify the workmanship of hermetically packaged semiconductor devices. This method shall also be utilized to inspect for damage due to handling, assembly, and test of the packaged device.

TM2072 is performed to verify the construction and workmanship of bipolar transistors, field effect transistors (FET), discrete monolithic, multichip, and multijunction semiconductor devices excluding microwave and selected RF devices.

TM2073 checks the quality and workmanship of semiconductor die for compliance with the requirements of the individual specification sheet.

TM2074 test is used to verify the internal materials, design, construction, and workmanship of discrete semiconductor diodes and other two-terminal semiconductor devices.

TM2076 test is performed to determine if there are defects within the sealed case of a semiconductor device, especially those resulting from sealing of the lid to the case, and internal defects such as foreign objects, improper interconnecting wires, and voids in the die attach material.

TM2037 is performed to measure bond strengths, evaluate bond strength distributions, or determine compliance with specified bond strength requirements of the applicable acquisition document.

TM2026 test method is evaluate the solderability of leads, pads, pins and solder terminals of semiconductor devices that will be assembled using tin-lead eutectic solder.

TM2075 test verifies that design and construction of a semiconductor device are the same as those documented in the qualified design report and for which qualification approval has been granted.

TM2077 test method provides a means of judging the quality and acceptability of metallization on semiconductor dice. It addresses the specific metallization defects that are batch process oriented, and which can best be identified utilizing this test method.